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| FLM1414-8F Internally Matched Power GaAs FET FEATURES * * * * * * * High Output Power: P1dB = 39.0dBm (Typ.) High Gain: G1dB = 6.0dB (Typ.) High PAE: add = 27% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50 Hermetically Sealed DESCRIPTION The FLM1414-8F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25C Condition Rating 15 -5 42.8 -65 to +175 175 Unit V V W C C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 32.0 and -4.4 mA respectively with gate resistance of 100. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Current Power-Added Efficiency Gain Flatness 3rd Order Intermodulation Distortion Thermal Resistance Channel Temperature Rise CASE STYLE: IA Symbol IDSS gm Vp VGSO P1dB G1dB Idsr add G IM3 Rth Tch f = 14.5GHz, f = 10MHz 2-Tone Test Pout = 28.5dBm S.C.L. Channel to Case 10V x Idsr x Rth VDS = 10V f = 14.0 ~ 14.5 GHz IDS = 0.65 IDSS(Typ.) ZS = ZL = 50 Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 2200mA VDS = 5V, IDS = 170mA IGS = -170A Min. -0.5 -5.0 38.5 5.0 -44 Limit Typ. Max. 3400 3400 -1.5 39.0 6.0 2200 27 -46 3.0 5200 -3.0 2600 0.6 3.5 80 Unit mA mS V V dBm dB mA % dB dBc C/W C G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level Edition 1.2 August 2004 1 FLM1414-8F Internally Matched Power GaAs FET POWER DERATING CURVE 50 OUTPUT POWER & IM3 vs. INPUT POWER 35 Output Power (S.C.L.) (dBc) 33 31 29 27 25 23 21 Total Power Dissipation (W) 40 VDS=10V f1 = 14.5 GHz f2 = 14.51 GHz 2 - tone test Pout 30 -25 20 IM3 -45 -55 -65 18 20 22 24 26 28 10 0 50 100 150 200 Case Temperature (C) Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level OUTPUT POWER vs. FREQUENCY VDS=10V P1dB Pin=34dBm OUTPUT POWER vs. INPUT POWER 40 38 39 Output Power (dBm) Output Power (dBm) VDS=10V f = 14.25 GHz Pout 38 32dBm 36 34 32 30 28 26 22 24 37 36 35 34 33 14.0 14.1 14.2 14.3 14.4 14.5 28dBm 30dBm 25 add 15 10 5 0 26 28 30 32 34 Frequency (GHz) Input Power (dBm) 2 add (%) 20 IM3 (dBc) -35 FLM1414-8F Internally Matched Power GaAs FET +j50 +j100 +j25 S11 S22 +90 S21 S12 14.2 14.0 +j250 +j10 13.8 GHz 14.7 13.8 GHz 250 14.0 14.2 14.5 14.4 14.2 14.0 14.0 13.8 GHz 13.8 GHz 14.2 14.4 14.5 14.4 14.5 14.7 14.7 0 10 14.5 14.4 14.7 50 180 1 2 3 4 SCALE FOR |S21| SCALE FOR |S12| 0 -j10 -j250 0.1 -j25 -j50 -j100 0.2 -90 FREQUENCY S11 (MHZ) MAG ANG S-PARAMETERS VDS = 10V, IDS = 2200mA S21 S12 MAG ANG MAG ANG S22 MAG ANG 13800 13900 14000 14100 14200 14300 14400 14500 14600 14700 .337 .284 .231 .182 .147 .144 .172 .221 .272 .323 18.1 4.4 -12.4 -33.2 -64.5 -103.7 -137.1 -160.1 -176.7 170.6 2.004 2.044 2.081 2.103 2.116 2.115 2.097 2.067 2.017 1.949 130.1 119.3 108.6 97.6 86.4 75.1 63.7 52.4 41.3 30.3 .100 .104 .110 .114 .114 .119 .119 .118 .116 .115 132.0 121.3 109.7 99.8 88.6 77.3 67.5 56.1 45.9 35.6 .513 .497 .474 .444 .413 .373 .338 .300 .264 .237 4.9 -5.7 -16.3 -26.7 -37.7 -49.0 -60.8 -74.0 -88.6 -105.3 3 FLM1414-8F Internally Matched Power GaAs FET Case Style "IA" Metal-Ceramic Hermetic Package 1.5 Min. (0.059) 1 2-R 1.250.15 (0.049) 0.1 (0.004) 4 2 3 0.5 (0.020) 1.5 Min. (0.059) 1.80.15 (0.071) 3.2 Max. (0.126) 8.1 (0.319) 0.2 Max. (0.008) 1.15 (0.045) 9.70.15 (0.382) 13.00.15 (0.512) 16.50.15 (0.650) 1. 2. 3. 4. Gate Source (Flange) Drain Source (Flange) Unit: mm(inches) For further information please contact: CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com * Do not put this product into the mouth. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte Ltd. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. (c) 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170 4 |
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